Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9791128 | Superlattices and Microstructures | 2005 | 9 Pages |
Abstract
The effects of atomic hydrogen and nitrogen produced by remote r.f. H2 and N2 plasmas on the structure, morphology, and optical and electrical properties of Zn- and O-polar ZnO crystals and on ZnO thin films grown by metal-organic chemical vapour deposition (MOCVD) have been studied. It is found that the Zn-polar form is highly reactive with atomic hydrogen, while the O-polar form is almost inert. This difference in reactivity allows one to discern the O-polarity of the (0001) oriented ZnO thin films grown by MOCVD. A decrease of the resistivity of the grain-like MOCVD films is found upon atomic hydrogen treatment. Conversely, atomic nitrogen treatment results in p-type doping of the ZnO film and in an improvement of the surface morphology and microstructure.
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Authors
M. Losurdo, M.M. Giangregorio, P. Capezzuto, G. Bruno, G. Malandrino, M. Blandino, I.L. Fragalà ,