| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9792758 | Current Opinion in Solid State and Materials Science | 2005 | 7 Pages |
Abstract
The surface chemistry and electrochemistry of the anisotropic etching of semiconductors are reviewed. Recent insights into the anisotropic chemical etching of silicon in alkaline solution and of electrochemical etching of anisotropic pores in n-type semiconductors are described. The possible role of galvanic effects in open-circuit etching is emphasized.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Chemistry
Authors
John J. Kelly, Harold G.G. Philipsen,