| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9793073 | Computational Materials Science | 2005 | 7 Pages |
Abstract
Ion irradiation of materials, which undergo a drastic density change upon amorphization have been shown to exhibit selforganized, nanometric structures of the amorphous phase in the crystalline host lattice. In order to better understand the process a Monte-Carlo-simulation code based on a simple model is developed. In the present work we focus on high-dose carbon implantations into silicon. The simulation is able to reproduce results gained by cross-sectional TEM measurements of high-dose carbon implanted silicon. Necessary conditions can be specified for the selforganization process and information is gained about the compositional and structural state during the ordering process which is difficult to be obtained by experiment.
Related Topics
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Computational Mechanics
Authors
F. Zirkelbach, M. Häberlen, J.K.N. Lindner, B. Stritzker,