Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9793074 | Computational Materials Science | 2005 | 8 Pages |
Abstract
We investigated a nonvolatile nanomemory element based on boron-nitride nanopeapods using molecular dynamics simulations. The suggested system was composed of two boron-nitride nanotubes filled Cu electrodes and fully ionized endo-fullerenes. The two boron-nitride nanotubes were placed face to face and the endo-fullerenes came and went between the two boron-nitride nanotubes under alternatively applied force fields. Since the endo-fullerenes encapsulated in the boron-nitride nanotubes hardly escape from the boron-nitride nanotubes, the proposed system can be considered to be a nonvolatile memory device. Several switching processes were investigated for external force fields using molecular dynamics simulations.
Related Topics
Physical Sciences and Engineering
Engineering
Computational Mechanics
Authors
Ho Jung Hwang, Won Young Choi, Jeong Won Kang,