Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9795850 | Materials Science and Engineering: A | 2005 | 8 Pages |
Abstract
Three grain size regimes were identified: Regime I (d > â¼0.5 μm), Regime II (d â 10-500 nm) and Regime III (d < â¼10 nm). Grain size hardening in accord with the Hall-Petch (H-P) equation occurred in Regimes I and II, grain size softening with the flow stress proportional to dâ1 occurred in III. The rate-controlling mechanism in Regime I was concluded to be the intersection of dislocations, that in II grain boundary shear promoted by the pile-up of dislocations and that in III grain boundary shear without pile-ups. The transition from I to II occurred when the dislocation cell size became larger than the grain size, that from II to III when the dislocation elastic interaction spacing became larger than the grain size. The H-P behavior in Regime I is in accord with the dislocation density model, that in II with the dislocation pile-up model. The general behavior of Au is similar to that reported previously for Cu and Ag.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
H. Conrad, K. Jung,