Article ID Journal Published Year Pages File Type
9796085 Materials Science and Engineering: A 2005 4 Pages PDF
Abstract
Dislocations in silicon are nucleated under high stresses as perfect ones in the shuffle set. It is shown that the same nucleation mechanism operates in hexagonal 4H-polytype SiC but, in contrast to silicon, perfect-shuffle configurations are unstable and transform by cross-slip into glide set dislocations.
Related Topics
Physical Sciences and Engineering Materials Science Materials Science (General)
Authors
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