Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9796085 | Materials Science and Engineering: A | 2005 | 4 Pages |
Abstract
Dislocations in silicon are nucleated under high stresses as perfect ones in the shuffle set. It is shown that the same nucleation mechanism operates in hexagonal 4H-polytype SiC but, in contrast to silicon, perfect-shuffle configurations are unstable and transform by cross-slip into glide set dislocations.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Jacques Rabier, Jean-Luc Demenet, Marie-Françoise Denanot, Xavier Milhet,