Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9796101 | Materials Science and Engineering: A | 2005 | 5 Pages |
Abstract
Undoped GaAs crystals show dislocation cell patterns with cell dimensions of some hundred micrometer orders of magnitude larger than in metals. Nevertheless, the correlation between cell diameter and dislocation density obeys the same Holt relation. Experimental results of dislocation analysis in GaAs were correlated with global computation of the resolved shear stress distribution at growth relevant temperatures and scaled with the universal function d = KÏâ1/2 = αKGbÏâ1, where d is the cell size, Ï the dislocation density, K, α the constants, G the shear modulus, b the magnitude of Burgers vector and Ï is the resolved shear stress. Samples grown with in situ control of stoichiometry show nearly no dislocation patterning due to the minimised native point defect content needed for dislocation climb.
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
P. Rudolph, Ch. Frank-Rotsch, U. Juda, F.-M. Kiessling,