Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9796140 | Materials Science and Engineering: A | 2005 | 4 Pages |
Abstract
Stacking fault tetrahedra (SFTs) are formed during irradiation of f.c.c. metals and alloys with low stacking fault energy. The high number density of SFTs observed suggests that they should contribute to radiation-induced hardening and, therefore, be taken into account when estimating mechanical property changes of irradiated materials. The key issue is to describe the interaction between a moving dislocation and an individual SFT, which is characterized by a small physical scale of about 100Â nm. In this paper we present results of an atomistic simulation of edge and screw dislocations interacting with small SFTs at different temperatures and strain rates and present mechanisms which can explain the formation of defect-free channels observed experimentally.
Keywords
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Yu. N. Osetsky, R.E. Stoller, D. Rodney, D.J. Bacon,