Oxidation behavior of a γ-TiAl-based alloy implanted by silicon and/or carbon

High-temperature Si implantation at 1173 K shows better oxidation resistance than that implanted at room temperature (RT) for the long-term oxidation. The C introduction by C + Si double implantation weakened the beneficial effect of Si, and the following annealing improved its oxidation resistance. Si doping in the TiAl alloy could facility the Al2O3 formation in the early stage of the oxidation through the enhancement of the Al activity, and C doping is harmful because of a porous oxide scale. From this study, it is indicated that high-temperature implantation at 1173 K is effective to thicken the Si-modified layer and thus, a strong and long-term Si modification effect. No cooperation effect of C and Si can be observed for C + Si double implantation to intensify the Si beneficial effect.