| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9796439 | Materials Science and Engineering: A | 2005 | 7 Pages |
Abstract
Pulsing effects on the reactivity between layers of Si and Mo were investigated. The direction of the current had no effect on the thickness of the product layer. More importantly, the growth rate of the product formed at 1070, 1170 and 1270 °C was independent of the pulse pattern, in the range studied in this work.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
W. Chen, U. Anselmi-Tamburini, J.E. Garay, J.R. Groza, Z.A. Munir,