Novel analytical and numerical approach to modeling low-frequency noise in semiconductor devices

In this work, based on robust experimental results, we derive a novel theoretical probabilistic approach to model the low-frequency noise power S(f) in semiconductor devices. Using the proposed approach we obtained, analytically, the average of the integrated noise power Wp=∫fLfHS(f)df as a function of the frequency bandwidth [fL,fH], showing that 〈Wp〉∝ln2(fH/fL). The second moment and the relative error in Wp are also calculated. A numerical fit for the relative error was performed, showing that lower and upper bound estimates to noise power depend only on the ratio fH/fL.