| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9801365 | Science and Technology of Advanced Materials | 2005 | 4 Pages |
Abstract
We report the transport properties of C60 thin film field-effect transistors (FETs) with a channel of several-hundred nanometers. Asymmetrical drain current ID versus source-drain voltage VDS characteristics were observed. This phenomenon could be explained in terms of the high contact-resistance between the C60 thin film and the source/drain electrodes. This device showed a current on/off ratio >105.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Yukitaka Matsuoka, Nobuhito Inami, Eiji Shikoh, Akihiko Fujiwara,