Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9801448 | Science and Technology of Advanced Materials | 2005 | 5 Pages |
Abstract
The strong Eu3+ photoluminescence in xSnO2-(100âx)SiO2 derived by the sol-gel method was reported. It was shown that Eu3+ ions were embedded in SnO2 nanocrystals (tetragonal, rutile) surrounded by a SiO2 glass matrix. Time-resolved photoluminescence spectra and excitation spectra revealed that Eu3+ ions could receive excitation energy from electron-hole pairs in SnO2 semiconductor nanocrystal, whose band-gap energy shifted to the higher energy side due to the quantum size effect, and was tuned to an optimum frequency for energy transfer to Eu3+ ions. Absolute quantum luminescence efficiencies were found to be 60.5 (internal) and 26.7% (external).
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Tomokatsu Hayakawa, Masayuki Nogami,