Article ID Journal Published Year Pages File Type
9801448 Science and Technology of Advanced Materials 2005 5 Pages PDF
Abstract
The strong Eu3+ photoluminescence in xSnO2-(100−x)SiO2 derived by the sol-gel method was reported. It was shown that Eu3+ ions were embedded in SnO2 nanocrystals (tetragonal, rutile) surrounded by a SiO2 glass matrix. Time-resolved photoluminescence spectra and excitation spectra revealed that Eu3+ ions could receive excitation energy from electron-hole pairs in SnO2 semiconductor nanocrystal, whose band-gap energy shifted to the higher energy side due to the quantum size effect, and was tuned to an optimum frequency for energy transfer to Eu3+ ions. Absolute quantum luminescence efficiencies were found to be 60.5 (internal) and 26.7% (external).
Related Topics
Physical Sciences and Engineering Materials Science Materials Science (General)
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