| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9801870 | Solid State Communications | 2005 | 5 Pages |
Abstract
We measured differential tunneling conductance (dI/dV, d2I/dV2) spectra of spin-valve-type magnetic tunnel junctions (MTJs) with a MgO(001) tunnel barrier layer and amorphous CoFeB ferromagnetic electrodes that show 315% magnetoresistance (MR) ratio at 4.3 K. The dI/dV spectra showed clear reduction in the conductance at around ±400 mV for a parallel magnetic configuration. Such anomalous spectra have never been observed for MTJs with an amorphous Al-O barrier. The d2I/dV2 spectra showed several distinct peaks between 5 and 100 mV. Magnon excitations are assigned to an origin of those peaks and thought to be a dominant process to reduce MR at finite bias voltage.
Keywords
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Rie Matsumoto, Yusuke Hamada, Masaki Mizuguchi, Masashi Shiraishi, Hiroki Maehara, Koji Tsunekawa, David D. Djayaprawira, Naoki Watanabe, Yoshinari Kurosaki, Taro Nagahama, Akio Fukushima, Hitoshi Kubota, Shinji Yuasa, Yoshishige Suzuki,