| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9801871 | Solid State Communications | 2005 | 5 Pages |
Abstract
The light-induced creation of hydrogen-pairs in a-Si:H is investigated, using a previous model of the light-induced creation of dangling bonds in a-Si:H. The formation of hydrogen-pairs is reasonably accounted for in comparison with the observation of the doublet in nuclear magnetic resonance spectra in a-Si:H by Su et al. The spin-lattice relaxation time of hydrogen-pairs observed above 7Â K by Su et al. is discussed in terms of the presence of a normal dangling bond located near a hydrogen-pair.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
K. Morigaki, H. Hikita,