Transparent p-type ZnO films obtained by oxidation of sputter-deposited Zn3N2

We report on the fabrication of thin ZnO:N film by thermal oxidation of zinc nitride layers sputter-deposited on quartz, sapphire, GaN, and ZnO surfaces. Through optimising several crucial technological steps we have achieved p-type conductivity with the carrier concentration in mid 1017 cm−3 range and mobility of ∼10 cm2/Vs. Rich photoluminescence spectra have been observed in the region corresponding to the fundamental energy gap region with peaks that can be related to acceptor bound exciton transitions. The transmittance of p-ZnO:N in the whole visible spectrum is ∼80%.