Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9801945 | Solid State Communications | 2005 | 5 Pages |
Abstract
We report on the fabrication of thin ZnO:N film by thermal oxidation of zinc nitride layers sputter-deposited on quartz, sapphire, GaN, and ZnO surfaces. Through optimising several crucial technological steps we have achieved p-type conductivity with the carrier concentration in mid 1017Â cmâ3 range and mobility of â¼10Â cm2/Vs. Rich photoluminescence spectra have been observed in the region corresponding to the fundamental energy gap region with peaks that can be related to acceptor bound exciton transitions. The transmittance of p-ZnO:N in the whole visible spectrum is â¼80%.
Keywords
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
E. Kaminska, A. Piotrowska, J. Kossut, A. Barcz, R. Butkute, W. Dobrowolski, E. Dynowska, R. Jakiela, E. Przezdziecka, R. Lukasiewicz, M. Aleszkiewicz, P. Wojnar, E. Kowalczyk,