Convergent beam electron diffraction investigation of inversion domains in GaN

In this work we have used convergent beam electron diffraction (CBED) to determine the polar character of closed domains in GaN layers grown on various substrates. It was found that such domains on top of 6HSiC are non-polar prismatic stacking faults, whereas inversion domains may form directly on top of (0 0 0 1) sapphire or (1 1 1) silicon.