Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9803406 | Journal of Alloys and Compounds | 2005 | 5 Pages |
Abstract
InxAl1 â xAs layers on InP substrate can be subjected to compressive as well as tensile strain due to lattice parameter differences induced by suitable alloy composition changes. The 2 μm thick InxAl1 â xAs (0.50 â¤Â x â¤Â 0.53) layers were grown on the (0 0 1) oriented InP substrates by molecular beam epitaxy (MBE). They were investigated using X-ray diffraction and chemical etching. X-ray studies were performed applying high-resolution diffractometry in the double (DAD) and triple (TAD) axis configuration. It was found that the In0.53Al0.47As/InP layer under compressive strain relaxes partially along two ã1 1 0ã directions. On the other hand, the In0.50Al0.50As/InP layers, being under tensile strain, consist of two sub-layers; the first one, adjacent to the substrate is pseudomorphic whereas the upper sub-layer is partially relaxed and the relaxation is anisotropic. The upper sub-layer is fully strained in the [1 1 0] direction while partially relaxed in the [â1 1 0] one.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
A. Shalimov, J. Bak-Misiuk, J. Kaniewski, J. Trela, W. Wierzchowski, K. Wieteska, W. Graeff,