| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9803623 | Journal of Alloys and Compounds | 2005 | 5 Pages |
Abstract
Top seeded solution growth of ytterbium-doped gadolinium aluminium borate (Yb3+:GAB) crystals with different Yb3+ concentration (x = 0.125, 0.33, 0.509, and 0.74) is reported. The polarized absorption spectra, emission spectra, and fluorescence lifetime of 50.9 at.% Yb3+-doped GAB crystal were measured at room temperature. The X-ray powder diffraction proved that the structure of the 50.9 at.% Yb3+:GAB crystal is the same as the pure GAB crystal with space group R32. The spectroscopic parameters of the crystal were compared with those of low Yb3+-doped GAB crystal. The results show that the Yb3+:GAB crystals with high Yb3+ concentration are potential candidates for compact and efficient microchip laser media.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Jinsheng Liao, Yanfu Lin, Yujin Chen, Zundu Luo, Yidong Huang,