| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9803664 | Journal of Alloys and Compounds | 2005 | 5 Pages |
Abstract
The dc-electrical conduction of the (Er oxide-silicon) structure was studied at room temperature and temperature range of 295-385Â K. Current-voltage J(Vg) and current-temperature J(T) characteristics were analysed, observing that they referred to different current-transfer processes depending on their annealing conditions i.e. on their structure and trap concentration. The current transfer in the oxide film annealed in dry oxygen was governed by the Richardson-Schottky (RS) mechanism while in the oxide film annealed in vacuum was ruled by the trap-charge-limited-space-charge-limited conductivity (TCLC-SCLC) mechanism characterised by exponential distribution of traps. This change of current-transfer mechanism is attributed to the creation of more oxygen vacancies (traps) as a consequence of annealing in vacuum. However, the parameters of the above mechanisms were determined.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
A.A. Dakhel,