Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9803716 | Journal of Alloys and Compounds | 2005 | 4 Pages |
Abstract
Effects of Cu doping and pressures on the physical properties of PbPdO2 have been investigated. Single-phase samples of PbPd1âxCuxO2 (0 â¤Â x â¤Â 0.04) have been synthesized via solid-state reaction and their temperature-dependent electrical resistivity and thermoelectric properties have been characterized. The temperature-dependent electrical resistivity exhibits a metal-insulator transition around 90-140 K for all compositions. The sign of the thermoelectric power is positive for all compositions indicating that the majority of carriers in PbPd1âxCuxO2 (0 â¤Â x â¤Â 0.04) are holes. Both the electrical resistivity and the thermoelectric power increase as the Cu content increases. The largest power factor in this system is 0.022 μW/K2 cm at x = 0.03. The electrical resistivity of PbPdO2 decreases as the applied pressure increases. In addition, the metal-insulator transition is suppressed as the applied pressure increases.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
T.C. Ozawa, T. Taniguchi, Y. Nagata, Y. Noro, T. Naka, A. Matsushita,