Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9803863 | Journal of Alloys and Compounds | 2005 | 4 Pages |
Abstract
Semiconducting β-FeSi2 was grown on Si(0 0 1) substrates by depositing Fe layers of thickness 2, 4 and 6 nm at room temperature in an ultra-high vacuum system and subsequent in situ annealing at 600 °C for 15 min. The phase of the grown polycrystalline β-FeSi2 was confirmed by electron diffraction and infrared reflectance measurements. Transmission electron microscopy analysis has shown that the structure of the formed β-FeSi2 is thickness dependent. For an Fe layer of thickness 2 nm, β-FeSi2 nanodots with a mean diameter of about 15 nm were grown, together with islands of irregular shape and linear or S-type arrays of β-FeSi2 nanodots. For thicker Fe layers, the grown β-FeSi2 consisted of continuous polycrystalline layers.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
N. Vouroutzis, T.T. Zorba, C.A. Dimitriadis, K.M. Paraskevopoulos, L. Dózsa, G. Molnár,