Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9803930 | Journal of Alloys and Compounds | 2005 | 6 Pages |
Abstract
Textured Ru thin films (â¼120 nm) were deposited on Si and rolling-assisted biaxially textured Ni substrates by a DC magnetron sputtering technique with a two-step process. The biaxially textured pure Ni substrates with a thickness of 80 μm were fabricated by rolling followed by recrystallization. The alignments and the crystallinity of Ru films were analyzed by pole figures, as well as X-ray diffraction (θ â 2θ) analysis. The highly (0 0 2) oriented Ru films were fabricated on Si substrates, and four-fold symmetric Ru films on Ni(2 0 0) substrates. The resistivities of pure metallic Ru films were 20-80 μΩ cm for Ru on Si and 16-40 μΩ cm on Ni, respectively, which is sufficiently low to be used as a buffer layer in superconductor tapes or electrode materials in capacitor dielectrics.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Hu-Yong Tian, Yu Wang, Helen-Lai-Wa Chan, Chung-Loong Choy, Kwang-Soo No,