Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9804074 | Journal of Alloys and Compounds | 2005 | 5 Pages |
Abstract
The effect of different oxygen pressure (fO2) in the sputtering gas and the nature of the substrate on the electrical resistivity of thin films is presented. The electrical resistivity increases when the fO2 content in the sputtering gas decreases. For the same value of fO2, the electrical resistivity is higher for films on MgO substrate than for films on SiTiO3 substrate. For both substrates, in the lower temperature range, the underdoped films show a ln (1/T) behavior of Ï(T).
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
A.V. Pop, G. Ilonca, M. Pop, D. Marconi,