Effect of oxygen concentration in the sputtering gas and effect of substrate type on the electrical resistance of Bi:2201 nanoscale thin films

The effect of different oxygen pressure (fO2) in the sputtering gas and the nature of the substrate on the electrical resistivity of thin films is presented. The electrical resistivity increases when the fO2 content in the sputtering gas decreases. For the same value of fO2, the electrical resistivity is higher for films on MgO substrate than for films on SiTiO3 substrate. For both substrates, in the lower temperature range, the underdoped films show a ln (1/T) behavior of ρ(T).