| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9804098 | Journal of Alloys and Compounds | 2005 | 5 Pages |
Abstract
We have investigated the structural and optical properties of annealed gallium oxide (Ga2O3) film in the range of 750-1050 °C, which had been grown on SiO2 substrates by the metal organic chemical vapor deposition (MOCVD) technique. We revealed that postdeposition annealing of amorphous Ga2O3 generated grains in β-Ga2O3 phase. While photoluminescence spectra of as-deposited Ga2O3 films showed strong blue-green (BG) and ultraviolet (UV) emission, postdeposition annealing at high temperatures resulted in appearance of a longer wavelength UV band and a new green band.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Hyoun Woo Kim, Nam Ho Kim,