Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9808619 | Materials Letters | 2005 | 7 Pages |
Abstract
SnO2-based varistors doped with ZnO and WO3 were prepared by mixed oxide method. Experimental evidence shows that the increase in ZnO amount increases the volume and microstrain of unit cell while the WO3 promotes a decrease. The effect of ZnO and WO3 additives could be explained by the substitution of Sn4Â +Â by Zn2Â +Â and W6Â +Â . The addition of WO3 inhibits the grain growth due to the segregation in the grain boundary without influence in the densification of the samples. Besides that, an increase in the electrical resistance of the SnO2-ZnO-WO3 system was observed independent of the WO3 concentration.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
L. Perazolli, A.Z. Simões, U. Jr, F. Moura Filho, S. Gutierrez, C.O.P. Santos, J.A.G. Carrió, R.F.C. Marques, J.A. Varela,