Thermoelectric properties of the flash-evaporated n-type Bi2Te2.4Se0.6 thin films

The electronic transport properties of the flash-evaporated n-type Bi2Te2.4Se0.6 thin films have been investigated. The thickness dependence of Seebeck coefficient and electrical resistivity has been analyzed by the effective mean free path model. It was found that both the Seebeck coefficient and the electrical resistivity have a linear relation with the reciprocal of film thickness. The data analyzed by the effective mean free path model have been combined to evaluate important material parameters such as mean free path, its energy dependence, and Fermi energy. Annealing effects on the electronic transport properties have been also examined in conjunction with the antistructure defects. It was found that the annealing treatment is necessary for Bi2Te2.4Se0.6 thin films to reduce the antistructure defects and to improve their thermoelectric properties.