| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9808715 | Materials Letters | 2005 | 4 Pages |
Abstract
The CuO and Ta2O5-doped SnO2 system was obtained by conventional ceramics processing. The ceramic phases of samples was analyzed by X-ray diffraction (XRD) and the microstructure by means of scanning electron microscopy (SEM). The electrical field of a single phase of CuO and Ta2O5-doped SnO2 system was studied as a function of current density behavior and compared with the CoO and Ta2O5-doped SnO2 system. A high nonlinear coefficient α=37.9 was obtained. To illustrate the grain-boundary barrier formation of CuO and Ta2O5-doped SnO2-based varistors, a modified defect barrier model is introduced.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Chun-Ming Wang, Jin-Feng Wang, Wen-Bin Su, Guo-Zhong Zang, Peng Qi,