Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9809449 | Surface and Coatings Technology | 2005 | 5 Pages |
Abstract
Excimer laser irradiation was demonstrated to be effective for the crystallization of the semiconducting form (a-S) of amorphous hydrogenated carbonâgermanium (a-GeXCY:H) films in contrast to the insulating form (a-I) of these films that were resistant to such a treatment. Electrical conductivity, electron diffraction and Raman spectroscopy were used to characterize non-treated and laser beam treated a-S films. Two separate nanocrystalline phases, germanium and graphite-like, were found in these films after the excimer laser crystallization (ELC). A drastic change in the electrical conductivity mechanism from temperature activated to almost temperature independent was also observed.
Keywords
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
J. Tyczkowski, P. Kazimierski, Y. Hatanaka, T. Aoki,