| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9809451 | Surface and Coatings Technology | 2005 | 4 Pages |
Abstract
A change of water vapour partial pressure from 0 to 4 Pa was carried out in order to prepare sputtered tungsten oxide compounds with various oxygen and hydrogen concentrations. Oxygen, tungsten and hydrogen concentrations were determined by Rutherford Backscattering Spectroscopy (RBS) and by Elastic Recoil Detection (ERD) analysis. Structure of tungsten oxide films was analyzed by X-ray diffraction. At low water vapour partial pressure, the films are crystallized and WO2 and W3O phases were observed. The electrochromic performances of such film/SnO2/glass substrate system were measured and discussed taking into account the influence of the water vapour partial pressure injected into the deposition process on the structure, chemical composition and optical properties of the films.
Related Topics
Physical Sciences and Engineering
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Authors
H. Sadiki, J.F. Pierson, C. Rousselot, N. Martin, G. Terwagne,