| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9809482 | Surface and Coatings Technology | 2005 | 5 Pages |
Abstract
For plasma-enhanced (PE) CVD of SiCN thin films, hexamethyldisilazane (HMDS) and bis(trimethylsilyl)carbodiimide (BTSC) were selected as single source precursors and investigated by mass spectrometry. Based on their fragmentation patterns, X-NSi(CH3)2 with X=H (HMDS) or X=CN (BTSC) are postulated as film forming species. Their Si : N ratio is identical with that of the related SiCN thin films. H2, CH4, and C2H6 are found in the processing gas mixture during PECVD.
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Authors
Th. Stelzner, M. Arold, F. Falk, H. Stafast, D. Probst, H. Hoche,