Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9809547 | Surface and Coatings Technology | 2005 | 5 Pages |
Abstract
The density changes of porous SiLK (p-SiLK) organic dielectric films were studied by X-ray reflectivity technique. Blanket films on Si were studied under different plasma etch conditions, that are conventionally used in the etch processes of interconnects. X-ray reflectivity measurements were performed using a high-resolution Huber diffractometer and monochromatic 8.048 keV photons at the Singapore Synchrotron Light Source (SSLS). The results show that un-treated (as-grown) films are of good quality in terms of surface and interface roughness. All of the plasma-treated films keep their density (within 1-3% error), whereas the surface roughness increases and layer thickness decreases accordingly. The surface roughness is severely increased by oxidation for oxygen plasma-treated samples.
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Authors
P. Yang, D. Lu, B. Ramana Murthy, H.O. Moser,