Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9809637 | Surface and Coatings Technology | 2005 | 7 Pages |
Abstract
Silicon oxide (SiOx) films deposited on flexible polyethersulfone (PES) substrates by plasma-enhanced chemical vapor deposition (PEVCD) have been investigated for transparent barrier applications. Although the water vapor transmission rate (WVTR) of PES (â¼28 g/m2/day; thickness: 200 μm) is higher than that of the polyethylene terephthalate (PET; â¼16 g/m2/day; thickness: 188 μm), the PES substrate can withstand process temperatures of up to 180 °C, providing more flexibility in the design of device processing. Details of the substrate-temperature and film-thickness effects on the SiOx/PES properties in terms of transmittance, refractive index, deposition rate, adhesion, roughness, and WVTR were described. When the substrate temperature increased from 80 to 170 °C, the deposition rate, adhesion, and roughness values were found to increase while the WVTR decreased to a value of near 0.3 g/m2/day at 150 °C. With increasing the oxide thickness from 50 to 500 nm, the surface roughness increased from 2.71 to 5.84 nm. A lower WVTR value can be achieved under a barrier thickness of 200 nm. Further improvement was carried out by depositing a 100-nm-thick SiOx film on both sides of the PES substrate, which resulted in a minimum WVTR of 0.1 g/m2/day. The double-sided coatings on PES could balance the stress and greatly improve the WVTR data.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
D.S. Wuu, W.C. Lo, C.C. Chiang, H.B. Lin, L.S. Chang, R.H. Horng, C.L. Huang, Y.J. Gao,