| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9809679 | Surface and Coatings Technology | 2005 | 7 Pages |
Abstract
Fused silica substrates were implanted with: (1) phosphorus only, (2) indium only, and (3) phosphorus plus indium ions. Vibrational and electronic characterizations have been performed on the P only and In only samples to obtain an understanding of the thermal annealing behavior in order to obtain a meaningful guide for the fabrication of InP quantum dots (QDs) formed by sequential ion implantation of In and P in SiO2. Thermal annealing procedures for InP synthesis have been established and InP quantum dots are confirmed by TEM, XRD and far infrared measurements. Far IR spectra show a single resonance at 323 cmâ1 rather than two absorption peaks in its counterpart of bulk InP crystals. The single band absorption is attributed to the surface phonon of InP quantum dots which will appear between transverse optical (TO) and longitudinal optical (LO) phonon modes of the bulk.
Keywords
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
D. Denmark, A. Ueda, C.L. Shao, M.H. Wu, R. Mu, C.W. White, B. Vlahovic, C.I. Muntele, D. Ila, Y.C. Liu,