| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9812057 | Thin Solid Films | 2005 | 6 Pages |
Abstract
Polycrystalline BiFeO3 thin films of various thickness were fabricated on (111)Pt/Ti/SiO2/Si substrates via chemical solution deposition. The electrical properties were investigated using impedance and leakage current measurements. X-ray photoelectron spectroscopy (XPS) combined with Ar ion milling (depth profiling) was used to investigate elemental distribution near the electrode-film interface. It is shown that the dielectric constant depends on film thickness due to the presence of an interfacial film-electrode layer evidenced by XPS investigation. Direct current conductivity is found to be governed by Schottky and/or Poole-Frenkel mechanisms.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
S. Yakovlev, J. Zekonyte, C.-H. Solterbeck, M. Es-Souni,