Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812084 | Thin Solid Films | 2005 | 4 Pages |
Abstract
Nonalloyed transparent ohmic contacts of indium tin oxide (ITO) to p-type Si0.8Ge0.2 layer with and without a Si-capping layer were examined. The ITO films and the p-type Si0.8Ge0.2 layers were deposited by using sputtering and ultrahigh-vacuum chemical vapor deposition, respectively. It is shown that the ITO/p-type Si0.8Ge0.2 contact structure exhibits a specific contact resistance of 2.26 Ã 10â 5 Ω cm2 as compared to that of 2.78 Ã 10â 2 Ω cm2 for the ITO/Si/p-type Si0.8Ge0.2 contact structure. Possible mechanisms are proposed. The ITO film exhibits a transmittance more than 85% within a wavelength range from 800 to 1400 nm. Therefore, the ITO film has a high potential for fabricating near infrared optoelectronic devices using Si1âxGex material.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
J.D. Hwang, W.T. Chang, K.H. Hseih, G.H. Yang, C.Y. Wu, P.S. Chen,