Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition

P-type zinc oxide (ZnO) thin films were synthesized by ion beam assisted deposition and their optical and electrical properties were investigated. It was found that after annealing at 400 °C, the transmittance of ZnO films became higher than that of the as-deposited films. Hall measurements indicated that ZnO films were p-type and the highest carrier concentration of 2.17 × 1017 cm- 3 and mobility of 3.51 cm2/V·s were obtained. Photoconductivity of the p-type ZnO films was also investigated and the conductivity of the films under ultraviolet illumination is about 600 times larger than that in the dark.