Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812210 | Thin Solid Films | 2005 | 4 Pages |
Abstract
Indium tin oxide (ITO) films were prepared by radio frequency magnetron sputtering at room temperature, for use as a cathode in a transparent organic light-emitting diode (TOLED). To minimize damage to the TOLED by the ITO sputtering process, the target-to-substrate distance was increased to 20 cm. An ITO film deposited at the optimum oxygen partial pressure exhibited an electrical resistivity as low as 4.06 Ã 10â 4 Ω cm and a high optical transmittance of 91% in the visible range. The film was used as a transparent cathode for a TOLED with structure of an ITO coated glass substrate / Naphthylphenyldiamide (60 nm) / Tris-(8-hydroxyquinoline) aluminum (60 nm) / LiF (1 nm) / Al (2 nm) / Ag (8 nm) / ITO cathode (100 nm). A maximum luminance of 37,000 cd/m2 was obtained. The device performance was comparable to a conventional OLED.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Choong-Heui Chung, Young-Wook Ko, Yong-Hae Kim, Choong-Yong Sohn, Hye Yong Chu Hye Yong Chu, Sang-Hee Ko Park, Jin Ho Lee Jin Ho Lee,