Electrochemical deposition of PbSe and CdTe nanoparticles onto p-Si(100) wafers and into nanopores in SiO2/Si(100) structure

Electrochemical deposition of PbSe and CdTe nanoparticles onto p-Si(100) wafers and into nanopores in SiO2 layer grown thermally on p-Si(100) substrates (SiO2/Si(100) structure) under illumination was studied. To produce nanopores we used SiO2 layer with tracks developed by irradiation of 350 MeV Au ions. Pores structure was formed by chemical etching of the irradiated SiO2 layer in dilute HF. The pores were shaped like truncated cones with a base diameter of 200 and 250 nm and height of 200 nm. Photoelectrochemical deposition of PbSe and CdTe was carried out with constant cathodic potentials from the water solutions containing Pb2+, Cd2+ cations and H2SeO3, H2TeO3 acids. The potentials applied were more positive than the equilibrium EMen+/Me0 redox potential. The underpotential deposition of Pb (or Cd) occurs only onto the co-deposited Se (or Te) atoms due to electrons photogenerated in Si substrate. The average sizes of PbSe and CdTe particles electrodeposited onto Si(100) wafers were dependent on the duration of electrodeposition, changing from 50 to 200 nm for PbSe and 30-80 nm for CdTe. According to XRD data, PbSe particles formed at ambient conditions had the crystalline structure. To deposit CdTe nanoparticles we used an electrolyte heated up to 80 °C. Variations in the electrodeposition time enabled one to form either separate chalcogenide particles or a polycrystalline film-like layer in case of electrodeposition onto p-Si(100) wafers and to control the degree of pore filling in case of electrodeposition into the nanopores of SiO2/Si(100) structure.