Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812231 | Thin Solid Films | 2005 | 4 Pages |
Abstract
Quantum well (QW) structures of AlxGa1-xAs/GaAs were characterized by photoluminescence technique as a function of the temperature between 10 and 300 K. The structures were grown on a 500 nm thick GaAs buffer layer with Molecular Beam Epitaxy technique. We have studied the properties of in-situ Cl2-etched GaAs surfaces and overgrown QW structures as a function of the etching temperature (70 and 200 °C). Several models were used to fit the experimental points. Best fit to experimental points was obtained with the Pässler model.
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Authors
A. Caballero-Rosas, C. MejÃa-GarcÃa, G. Contreras-Puente, M. López-López,