Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812267 | Thin Solid Films | 2005 | 5 Pages |
Abstract
Electrical contacts of NiSi0.82Ge0.18 to p+-Si0.82Ge0.18 were fabricated and characterised. Lateral growth of the NiSi0.82Ge0.18 under SiO2 isolation was observed. A three-dimensional model was employed to extract the contact resistivity by considering both the lateral growth and the presence of a recessed NiSi0.82Ge0.18 step into the Si0.82Ge0.18. The contact resistivity extracted was 5.0 Ã 10â 8 and 1.4 Ã 10â 7 Ω cm2 for small contacts of circular geometry and large contacts of square shape, respectively. Possible causes responsible for this 3-fold difference in contact resistivity were discussed. An underestimate of the contact resistivity by 35% was found if a two-dimensional model was used without taking into account the complex interface morphology.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
S. Persson, C. Isheden, T. Jarmar, S.-L. Zhang,