Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812274 | Thin Solid Films | 2005 | 5 Pages |
Abstract
The microstructure and crystallinity of epitaxial YB2Cu3O7âx (YBCO) thin films grown on a silicon using a buffer of Eu2CuO4 (ECO)/Yttrium-stabilized ZrO2 (YSZ) were investigated by X-ray high-resolution diffraction, small angle reflection, and reciprocal space map, as well as atomic force microscopy. The results showed that YBCO films with a buffer of ECO/YSZ were well oriented in the [00L] direction perpendicular to the substrate surface. The rocking measurements for the YBCO films grown on ECO/YSZ buffered Si show a smaller value of the full widths at half maximum (â¼2.07°) in comparing with that of the YBCO with a single YSZ buffer (â¼4.48°). Moreover, the surface morphology of YBCO films with an ECO/YSZ buffer is significantly improved. The average size of grains on the surface was much smaller, indicating that growth of YBCO on Si with such a buffer of ECO/YSZ is highly epitaxial.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
X.L. Li, J. Gao, H.Y. Wong, Z.H. Mai,