Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812306 | Thin Solid Films | 2005 | 6 Pages |
Abstract
Low temperature (4.5 K) photoluminescence measurements and two-dimensional [115] high resolution X-ray diffractometry rocking curves of antimony doped III-V-N on GaAs grown by solid source molecular beam epitaxy, show a possible non-radiative recombination defect known as the SbGa heteroantisite and another Sb-related defect peak at 1017 nm (â¼1.22 eV). The elimination of these defects can be a measure of the improvement in crystal quality of GaAsN:Sb. We find that Sb behaves as an impurity and competes with N for As sites until the surfactant effect commences at 1.733 Ã 10â 6 Pa. The Sb latency effect which results in a graded Sb composition at the interface was found by secondary ion mass spectroscopy measurements.
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Authors
W.K. Cheah, W.J. Fan, S.F. Yoon, K.H. Tan, R. Liu, A.T.S. Wee,