| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9812310 | Thin Solid Films | 2005 | 5 Pages |
Abstract
The growth of Pt particles electrochemically deposited onto boron-doped diamond thin films supported by silicon wafers has been studied by cyclic voltammetry and by atomic force microscopy. On a small number of diamond sites the initially electrodeposited Pt particles present a fast growth, which can be attributed to a better electrical conductivity resulting from a higher local concentration of boron used in the boron-doped diamond films as doping centres.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
B. Riedo, G. Dietler, O. Enea,