Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812312 | Thin Solid Films | 2005 | 5 Pages |
Abstract
Plasma polymerized N,N,3,5 tetramethylaniline (PPTMA) thin films were deposited at room temperature by a parallel plate capacitively coupled glow discharge reactor. The current density-voltage (J-V) characteristics of PPTMA thin films of different thicknesses have been investigated at different temperatures. The J-V characteristics show two slopes at the lower and higher voltage regions. It is observed that space charge limited conduction is operative in the higher voltage region in PPTMA thin films. From the experimental studies the carrier mobility, the free carrier density, and the total trap density are found to be about 1.3 Ã 10â  13 m2 Vâ 1 sâ 1, 2 Ã 1021 mâ 3 and 4 Ã 1030 mâ 3 respectively. From the Arrhenius plots of J vs. 1 / T for the applied voltages 2 and 10 V, the activation energies (ÎE) are estimated to be about 0.19 ± 0.02 and 0.85 ± 0.05 eV in the lower and higher temperature regions respectively. At lower temperatures, the available thermal energy is not sufficient to ionize the traps, so hopping mobility is observed. While at higher temperatures, the higher values of ÎE indicate a transition from a hopping process to a distinct energy level process.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
H. Akther, A.H. Bhuiyan,