Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812313 | Thin Solid Films | 2005 | 5 Pages |
Abstract
Investigated was the epitaxial growth of La0.7Ca0.3MnO3 (LCMO)/Ir/MgO multilayer on silicon substrate, which was prepared by pulsed-laser deposition. The whole growth process of multilayer was in situ monitored by using reflection high-energy electron diffraction (RHEED). The reflection high-energy electron diffraction observations and X-ray diffraction analysis show that the LCMO film can be epitaxially grown on silicon substrate with an out-of-plane alignment of LCMO(001)//Ir(001)//MgO(001)//Si (001). The field-induced polarity-dependent reversible resistance-switching was observed in the Ag-LCMO-Ir sandwich structure with a newly discovered accumulation-like phenomenon. Further characterization through I-V measurements for “ON”-/”OFF”-State shows that the resistance-switching phenomenon occurred in our Ag-LCMO-Ir sandwich structure should be attributed to a carrier-injection-ordering process.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Tong Lai Chen, Xiao Min Li, Rui Dong, Qun Wang, Li Dong Chen,