Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812323 | Thin Solid Films | 2005 | 6 Pages |
Abstract
In this study, the hump in the capacitance-voltage (C-V) curves, variation of leakage current, interfacial layer increase, and electron trapping in non-surface treated hafnium oxide (HfO2) samples were observed and investigated. From the results of the investigation, it was found that both rapid thermal oxidation and NH3 surface treatments improved the C-V curves. In addition, it was observed that samples treated with ammonia exhibited a lower leakage current when compared with the others. From the results of the dielectric leakage current study, a severe electron trapping effect was exhibited under higher electric field stress. Finally, the conduction mechanism in the HfO2 thin film was dominated by Frenkel-Poole emission in a high electric field.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
S.C. Chen, J.C. Lou, C.H. Chien, P.T. Liu, T.C. Chang,