| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9812367 | Thin Solid Films | 2005 | 5 Pages |
Abstract
Laser crystallized polycrystalline silicon-germanium (Si1âxGex) thin films were characterized with Raman spectroscopy. For xâ¥0.33, peak splitting of phonon modes is observed in the Raman spectra, a finding that is associated with phase segregation. Energy dispersive X-ray measurements confirm that those samples contain areas with poor and rich Ge concentrations.
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Authors
M. Weizman, N.H. Nickel, I. Sieber, W. Bohne, J. Röhrich, E. Strub, B. Yan,