Electronic transport in P-doped laser-crystallized polycrystalline silicon

The electronic transport in P-doped laser-crystallized polycrystalline silicon was investigated using Hall-effect and electron spin resonance measurements. With increasing temperature and increasing electron concentration the Hall-mobility increases showing a thermally activated behavior. The potential barrier height at the grain boundaries was estimated from the temperature dependence of the Hall-mobility. The barrier height decreases with increasing electron concentration. From the linewidth of the resonance of the conductive electron in electron spin resonance measurements the intra grain mobility could be determined to ≈40 cm2/Vs. This value is about a factor 4 higher than the Hall-mobility. Using the intra grain mobility the original potential barrier height was estimated. The data will be compared to results published for microcrystalline silicon.