Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812380 | Thin Solid Films | 2005 | 5 Pages |
Abstract
In the past, pulsed electrically detected magnetic resonance experiments (pEDMR) with silicon dangling bonds (db) in hydrogenated microcrystalline silicon (μc-Si:H) showed that at low temperatures, two db recombination mechanisms exist where electrons are captured (i) by dbs directly (db-dc) or (ii) via band-tail states (tail-db). Here, similar experiments on hydrogenated amorphous silicon (a-Si:H) and crystalline silicon/silicondioxide interfaces (c-Si/SiO2) are presented. They show that at low temperatures, only the db-dc is detectable at dbs in the c-Si/SiO2 interface (Pb centers) while in a-Si:H, only tail-db processes are observed.
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Authors
C. Boehme, F. Friedrich, T. Ehara, K. Lips,